* D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF964S Marking: BF964S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 12623 S Absolute Max
BF964S
Vishay ↗ Telefunken
127.11 KB
N-channel dual gate mos-fieldeffect tetrode.
BF964S Vishay Telefunken N Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for .
📁 Related Datasheet
BF964 N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF960 N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE (Vishay Telefunken)
BF960NF06 N-Channel MOSFET (BYD)
BF960NF06T N-Channel MOSFET (BYD)
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode (New Jersey Semi-Conductor)
BF963 Silicon N-Channel MOSFET Tetrode (Siemens)
BF965 Silicon N-Channel MOSFET Tetrode (Siemens)
BF966 N-Channel Dual Gate MOS Fieldeffect Tetrod (Telefunken)
BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)
