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BF96N60 - N-Channel MOSFET

BF96N60 Description

BYD Microelectronics Co., Ltd.BF96N60/ BF96N60L 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

BF96N60 Features

* z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single Pulse Avalanc

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Datasheet Details

Part number
BF96N60
Manufacturer
BYD
File Size
255.96 KB
Datasheet
BF96N60-BYD.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET BYD
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