Datasheet Details
Part number:
BF96N60L, BF96N60
Manufacturer:
BYD
File Size:
255.96 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: BF96N60L, BF96N60.
Please refer to the document for exact specifications by model.
BF96N60L, BF96N60, N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Th
BF96N60L Features
* z VDS =600 V z ID =5.5A z RDS(ON) =1.7 Ω TYP(VGS=10V,ID=2.75A) z CRSS (typical 7.0pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single Pulse Avalanc
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