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BF9024SPD-M P-Channel MOSFET and Schottky Diode

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Description

BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General .
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge.

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Datasheet Specifications

Part number
BF9024SPD-M
Manufacturer
BYD
File Size
364.90 KB
Datasheet
BF9024SPD-M_BYD.pdf
Description
P-Channel MOSFET and Schottky Diode

Features

* MOSFET z z z VDS (V) = -20V ID = -2.7A Low on-state resistance RDS (on) < 90mΩ . (VGS = -4.5V) RDS (on) < 120mΩ . (VGS = -2.5V) VF=0.42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drai

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