BF9028DND-GE N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF9028DND-GE 20V N-Channel MOSFET General .
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

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Datasheet Specifications

Part number: BF9028DND-GE
Manufacturer: BYD
File Size: 213.31 KB
Datasheet: BF9028DND-GE-BYD.pdf
Description: N-Channel MOSFET

Features

* z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (p

BF9028DND-GE Distributors

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BF9028DND-GE N-Channel MOSFET BYD

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