BF904AWR Datasheet - NXP

BF904AWR N-channel dual gate MOS-FETs

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT34.

BF904AWR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

* VHF and

BF904AWR_PhilipsSemiconductors.pdf