BF904WR Datasheet (NXP) - N-channel dual-gate MOS-FET

BF904WR, N-channel dual-gate MOS-FET

Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

CAUTION Marking code: MC.

handbook, half

BF904WR Features

* Specially designed for use at 5 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS