BF904R Description
Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
BF904R Key Features
- Specially designed for use at 5 V supply voltage
- Short channel transistor with high transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC