• Part: BF904R
  • Description: N-channel dual gate MOS-FETs
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 111.30 KB
BF904R Datasheet (PDF) Download
NXP Semiconductors
BF904R

Key Features

  • Specially designed for use at 5 V supply voltage
  • Short channel transistor with high transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Superior cross-modulation performance during AGC. APPLICATIONS
  • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source BF904; BF904R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.