Datasheet4U.com

BF904AR Datasheet PDF

NXP Semiconductors BF904AR

The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
Part No. BF904AR
Datasheet BF904AR Download
Manufacturer
NXP Semiconductors
Description N-channel dual gate MOS-FETs
Buy Stock & Price
BF904AR datasheet page 1 preview

FEATURES

● Specially designed for use at 5 V supply voltage
● Short channel transistor with high transfer admittance to input capacitance ratio
● Low noise gain controlled amplifier up to 1 GHz
● Superior cross-modulation performance during AGC.

APPLICATIONS

● VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure operating junction temperature CAUTION f = 1 MHz f = 800 MHz Ts ≤ 110 °C 2 Top view BF904A; BF904AR; BF904AWR PINNING PIN 1 2 3 4

DESCRIPTION

source drain gate 2 gate 1 1 Top view 2 MSB014 handbook, 2 columns 4 3 BF904A marking code: M41.
BF904AR page 2 preview BF904AR page 3 preview