• Part: BF904AR
  • Description: N-channel dual gate MOS-FETs
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 114.51 KB
BF904AR Datasheet (PDF) Download
NXP Semiconductors
BF904AR

Key Features

  • Specially designed for use at 5 V supply voltage
  • Short channel transistor with high transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Superior cross-modulation performance during AGC. APPLICATIONS
  • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Tj PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure operating junction temperature CAUTION f = 1 MHz f = 800 MHz Ts ≤ 110 °C 2 Top view BF904A; BF904AR; BF904AWR