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BF9060BSNL - N-Channel MOSFET

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

Key Features

  • z VDS =60 V z ID =100A z Typical RDS(ON) =4.5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD TJ,Tstg TL Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （.

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Datasheet Details

Part number BF9060BSNL
Manufacturer BYD
File Size 241.71 KB
Description N-Channel MOSFET
Datasheet download datasheet BF9060BSNL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BYD Microelectronics Co., Ltd. BF9060BSNL 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features z VDS =60 V z ID =100A z Typical RDS(ON) =4.