NXP Semiconductors BF901R
Silicon n-channel dual gate MOS-FETs
| Part No. | BF901R |
|---|---|
| Datasheet | BF901R Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon n-channel dual gate MOS-FETs |
| Buy | Stock & Price |
FEATURES
● Intended for low voltage operation● Short channel transistor with high ratio Yfs :Cis
● Low noise gain-controlled amplifier to 1 GHz
● BF901R has reverse pinning.
DESCRIPTION
Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1DESCRIPTION
source Marking code: MO1. BF901; BF901R QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj Yfs Cig1-s Crs F PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance input capacitance at gate 1 feedback capacitance noise figure at 800 MHz − − − − 28 2.35 25 1.7 TYP. MAX. 12...
