• Part: BF901R
  • Description: Silicon n-channel dual gate MOS-FETs
  • Category: MOSFET
  • Manufacturer: NXP Semiconductors
  • Size: 46.98 KB
BF901R Datasheet (PDF) Download
NXP Semiconductors
BF901R

Key Features

  • Intended for low voltage operation
  • Short channel transistor with high ratio  Yfs :Cis
  • Low noise gain-controlled amplifier to 1 GHz
  • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional munications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTION source Marking code: MO1. BF901; BF901R