BF9035SNZ-M Datasheet | BYD

Description The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This is applied to electronic systems as a power switch. Features z VDS=30 V z ID=4A z Low on-state resistance RDS (on) <65mΩ (VGS=10V，ID=2.0A) RDS (on) < 80mΩ (VGS=4.5V，ID=2.0A) RDS (on) < 95mΩ (VGS=3.0V，ID=2.0A) z Lead Pb-free and Halogen-free Absolute Maximum Ratings(TC = 25℃) Symbol VDS ID IDM VGS PD TJ,Tstg TL Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-Source Voltage Power Dissipation TC = 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose (Note a) Value 30 4 16 ±12 2.0 -55 to +150 150 Unit V A A V W ℃ ℃ Ordering Information Part Number BF9035SNZ-M Package SOT23-3 TS-MOS-PD-0062 Rev.A/0 Packaging...