Datasheet Details
| Part number | BF904AWR |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 114.51 KB |
| Description | N-channel dual gate MOS-FETs |
| Datasheet |
 BF904AWR Datasheet
|
|
|
General Description
Enhancement type field-effect transistors.
The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
Key Features
- Specially designed for use at 5 V supply voltage.
- Short channel transistor with high transfer admittance to input capacitance ratio.
- Low noise gain controlled amplifier up to 1 GHz.
- Superior cross-modulation performance during AGC.