BF904AWR - N-channel dual gate MOS-FETs

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NXP

BF904AWR N-channel dual gate MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF904AWR

Datasheet Details

Part number	BF904AWR
Manufacturer	NXP
File Size	114.51 KB
Description	N-channel dual gate MOS-FETs
Datasheet	BF904AWR Datasheet
Additional preview pages of the BF904AWR datasheet.

Product details

Description

Enhancement type field-effect transistors.

The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

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Other Datasheets by NXP

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Published: Mar 23, 2005 |