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BF904AWR Datasheet N-channel Dual Gate Mos-fets

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual gate.

General Description

Enhancement type field-effect transistors.

The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

Key Features

  • Specially designed for use at 5 V supply voltage.
  • Short channel transistor with high transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC.

BF904AWR Distributor