BF901 - Silicon n-channel dual gate MOS-FETs

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NXP

BF901 Silicon n-channel dual gate MOS-FETs by NXP - Datasheet Preview — Datasheet preview – BF901

Datasheet Details

Part number	BF901
Manufacturer	NXP
File Size	46.98 KB
Description	Silicon n-channel dual gate MOS-FETs
Datasheet	BF901 Datasheet
Additional preview pages of the BF901 datasheet.

Product details

Description

Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation.

Features

Intended for low voltage operation.
Short channel transistor with high ratio  Yfs :Cis.
Low noise gain-controlled amplifier to 1 GHz.
BF901R has reverse pinning.

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Other Datasheets by NXP

BF901R - Silicon n-channel dual gate MOS-FETs
BF904 - N-channel dual gate MOS-FETs
BF904A - N-channel dual gate MOS-FETs
BF904AR - N-channel dual gate MOS-FETs
BF904AWR - N-channel dual gate MOS-FETs
BF904R - N-channel dual gate MOS-FETs

Published: Mar 23, 2005 |