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BF901 Datasheet Silicon N-channel Dual Gate Mos-fets

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon.

General Description

Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

They are intended for UHF and VHF applications, such as television tuners and professional munications equipment especially suited for low voltage operation.

These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

Key Features

  • Intended for low voltage operation.
  • Short channel transistor with high ratio  Yfs :Cis.
  • Low noise gain-controlled amplifier to 1 GHz.
  • BF901R has reverse pinning.

BF901 Distributor