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BF901 - Silicon n-channel dual gate MOS-FETs

General Description

Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation.

Key Features

  • Intended for low voltage operation.
  • Short channel transistor with high ratio  Yfs :Cis.
  • Low noise gain-controlled amplifier to 1 GHz.
  • BF901R has reverse pinning.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 November 1992 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs FEATURES • Intended for low voltage operation • Short channel transistor with high ratio  Yfs :Cis • Low noise gain-controlled amplifier to 1 GHz • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected. They are intended for UHF and VHF applications, such as television tuners and professional communications equipment especially suited for low voltage operation.