BF908R Datasheet | Philips Semiconductors

FEATURES - High forward transfer admittance - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS - VHF and UHF applications with 12 V supply voltage, such as television tuners and professional munications equipment. handbook, halfpage Top view 2 g2 g1 MAM039 d s,b DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT143) and symbol; BF908. handbook, halfpag3e 4 d g2 g1 PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID Ptot Tj yfs Cig1-s Crs F drain-source voltage drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure Top view MAM040 s,b Fig.2 Simplified outline (SOT143R) and symbol; BF908R. CONDITIONS f = 1 MHz f = 800 MHz MIN. - - - - 36 2.4 20 - TYP. - - - - 43 3.1 30 1.5 MAX. 12 40 200 150 50 4 45...