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BF908WR - N-channel dual-gate MOS-FET

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NXP

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BF908WR N-channel dual-gate MOS-FET by NXP - Datasheet Preview — Datasheet preview – BF908WR

Datasheet Details

Part number	BF908WR
Manufacturer	NXP
File Size	103.19 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF908WR Datasheet
Additional preview pages of the BF908WR datasheet.

BF908WR Product details

Description

Depletion type field effect transistor in a plastic microminiature SOT343R package.

The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

CAUTION The device is supplied in an antistatic package.

Features

High forward transfer admittance.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.

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Published: Mar 23, 2005 |