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BF908WR Datasheet

Manufacturer: NXP Semiconductors
BF908WR datasheet preview

Datasheet Details

Part number BF908WR
Datasheet BF908WR_PhilipsSemiconductors.pdf
File Size 103.19 KB
Manufacturer NXP Semiconductors
Description N-channel dual-gate MOS-FET
BF908WR page 2 BF908WR page 3

BF908WR Overview

Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package.

BF908WR Key Features

  • High forward transfer admittance
  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz

BF908 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Philips Logo BF908 Dual-gate MOS-FETs Philips
BYD Logo BF90880SNL N-Channel MOSFET BYD
Philips Logo BF908R Dual-gate MOS-FETs Philips
NXP Semiconductors logo - Manufacturer

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BF908WR Distributor

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