Datasheet Details
| Part number | BF908WR |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 103.19 KB |
| Description | N-channel dual-gate MOS-FET |
| Datasheet |
 BF908WR Datasheet
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General Description
Depletion type field effect transistor in a plastic microminiature SOT343R package.
The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION The device is supplied in an antistatic package.
Key Features
- High forward transfer admittance.
- Short channel transistor with high forward transfer admittance to input capacitance ratio.
- Low noise gain controlled amplifier up to 1 GHz.