BF908WR Datasheet | NXP Semiconductors

FEATURES - High forward transfer admittance - Short channel transistor with high forward transfer admittance to input capacitance ratio - Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS - VHF and UHF applications with 12 V supply voltage, such as television tuners and professional munications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS - - - - 36 2.4 20 - MIN. - - - - 43 3.1 30 1.5 TYP. Marking code: MD. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 3 4 g2 g1 1 s,b Top view MAM198 Fig.1 Simplified outline (SOT343R) and symbol. MAX. 12 40 300 150 50 4 45 2.5 UNIT V m A m W °C m S p F f F d B 1995 Apr 25 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature up to Tamb = 45 °C; see Fig.2; note 1 CONDITIONS - - - - - - 65 - MIN. MAX. 12 40 ±10 ±10 300 +150 +150 V UNIT m A m A m A m W °C °C MLD154 handbook, halfpage Ptot (m W) 300 0 0 50 100 150 200 Tamb ( o C) Fig.2 Power derating...