BF909
FEATURES
- Specially designed for use at 5 V supply voltage
- High forward transfer admittance
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
APPLICATIONS
- VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional munications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The
PINNING
PIN 1 2 3 4
SYMBOL
DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 handbook, halfpage d handbook, halfpage...
