Datasheet4U Logo Datasheet4U.com

BF909R Datasheet N-channel dual gate MOS-FET

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors N-channel dual gate MOS-FETs Product specification BF909;.

Download the BF909R datasheet PDF. This datasheet also includes the BF909 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

General Description

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

The PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 handbook, halfpage d handbook, halfpage d 4 3 3 4 g2 g1 1 2 Top view MAM124 s,b BF909 marking code: %M3.

Fig.1 Simplified outline (SOT143) and symbol.

Key Features

  • Specially designed for use at 5 V supply voltage.
  • High forward transfer admittance.
  • Short channel transistor with high forward transfer admittance to input capacitance ratio.
  • Low noise gain controlled amplifier up to 1 GHz.
  • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

More Datasheets from NXP Semiconductors

Part Number Description
BF909 N-channel dual gate MOS-FET
BF909WR N-channel dual-gate MOS-FET
BF901 Silicon n-channel dual gate MOS-FETs
BF901R Silicon n-channel dual gate MOS-FETs
BF904 N-channel dual gate MOS-FETs
BF904A N-channel dual gate MOS-FETs
BF904AR N-channel dual gate MOS-FETs
BF904AWR N-channel dual gate MOS-FETs
BF904R N-channel dual gate MOS-FETs
BF904WR N-channel dual-gate MOS-FET