BF904WR
FEATURES
- Specially designed for use at 5 V supply voltage
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC. APPLICATIONS
- VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional munications equipment. DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION
Marking code: MC. handbook, halfpage
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d
3 g2 g1
2 1
Top view
MAM192 s,b
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
Fig.1 Simplified...
