BF904WR - N-channel dual-gate MOS-FET

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NXP

BF904WR N-channel dual-gate MOS-FET by NXP - Datasheet Preview — Datasheet preview – BF904WR

Datasheet Details

Part number	BF904WR
Manufacturer	NXP
File Size	119.78 KB
Description	N-channel dual-gate MOS-FET
Datasheet	BF904WR Datasheet
Additional preview pages of the BF904WR datasheet.

Product details

Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

Marking code: MC.

Features

Specially designed for use at 5 V supply voltage.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

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Other Datasheets by NXP

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Published: Mar 23, 2005 |