BF909WR
FEATURES
- Specially designed for use at 5 V supply voltage
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Superior cross-modulation performance during AGC.
PINNING
PIN 1 2 3 4
SYMBOL
DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1
APPLICATIONS
- VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional munications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. g2 g1
Top view
MAM192 s,b
Marking code: ME-
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