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BF909WR

Manufacturer: NXP Semiconductors

BF909WR datasheet by NXP Semiconductors.

BF909WR datasheet preview

BF909WR Datasheet Details

Part number BF909WR
Datasheet BF909WR_PhilipsSemiconductors.pdf
File Size 180.38 KB
Manufacturer NXP Semiconductors
Description N-channel dual-gate MOS-FET
BF909WR page 2 BF909WR page 3

BF909WR Overview

s, b source d drain g2 gate 2 g1 gate 1 APPLICATIONS  VHF and UHF applications with 3 to 7 V supply voltage handbook, halfpage d such as television tuners and professional munications equipment. 3 4 DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to...

BF909WR Key Features

  • Specially designed for use at 5 V supply voltage
  • Short channel transistor with high forward transfer
  • Low noise gain controlled amplifier up to 1 GHz
  • Superior cross-modulation performance during AGC
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BF909WR Distributor

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