BF901R Silicon n-channel dual gate MOS-FETs

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product speciﬁcation File under Discrete Semiconductors, SC07 .
Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

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Datasheet Specifications

Part number: BF901R
Manufacturer: NXP ↗
File Size: 46.98 KB
Datasheet: BF901R_PhilipsSemiconductors.pdf
Description: Silicon n-channel dual gate MOS-FETs

Features

* Intended for low voltage operation
* Short channel transistor with high ratio  Yfs :Cis
* Low noise gain-controlled amplifier to 1 GHz

Applications

* such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTIO

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BF901R Silicon n-channel dual gate MOS-FETs NXP

NXP BF901R-like datasheet