BF901R Datasheet - NXP

BF901R, Silicon n-channel dual gate MOS-FETs

DISCRETE SEMICONDUCTORS DATA SHEET BF901; BF901R Silicon n-channel dual gate MOS-FETs Product speciﬁcation File under Discrete Semiconductors, SC07 .
Enhancement type field-effect transistors in plastic microminiature SOT143 and SOT143R envelopes, with source and substrate interconnected.

Features

* Intended for low voltage operation
* Short channel transistor with high ratio  Yfs :Cis
* Low noise gain-controlled amplifier to 1 GHz

Applications

* such as television tuners and professional communications equipment especially suited for low voltage operation. These MOS-FET tetrodes are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING PIN 1 2 3 4 drain gate 2 gate 1 DESCRIPTIO

BF901R_PhilipsSemiconductors.pdf