* D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 12623 S Absolute Max
BF966S
Vishay ↗ Telefunken
127.74 KB
N-channel dual gate mos-fieldeffect tetrode.
BF966S
Vishay Telefunken
N
*Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Electrostatic sensitive device. Observe precautions for .
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