BF966S - N-Channel Dual Gate MOS-Fieldeffect Tetrode

Vishay Telefunken

Datasheet Details

Part number	BF966S
Manufacturer	Vishay ↗ Telefunken
File Size	127.74 KB
Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet	BF966S_VishayTelefunken.pdf

D Integrated gate protection diodes D High cross modulation performance D Low noise figure 3 4 2 94 9307 96 12647 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 1 BF966S Marking: BF966S Plastic case (TO 50) 1=Drain, 2=Source, 3=Gate 1, 4=Gate 2 12623 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature.

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Published: Mar 23, 2005 |