30PUA60 - DIODE
(Nihon Inter Electronics)
DIODE
FEATURES
Type :
30PUA60
OUTLINE DRAWING
3A 600V 32ns
* Ultra-Fast Recovery * Low Forward Voltage drop * Low Reverse Leakage Current * High S.
30P06G - P-Channel MOSFET
(ALLPOWER)
.
30P10GS - P-Channel MOSFET
(VBsemi)
30P10GS-VB
30P10GS-VB Datasheet P-Channel 100 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) () 0.040 at VGS = - 10 V 0.050.
30PDA10 - DIODE
(Nihon Inter Electronics)
DIODE Type : 30PDA10
3A 100V Tj =150 °C
FEATURES
* Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability
OUTLINE DRAWING
Ma.
30PDA20 - Standard Recovery Diode
(Nihon Inter Electronics Corporation)
3A Avg. 200 Volts Standard Recovery Diode 30PDA20
INSTANTANEOUS FORWARD CURRENT (A)
50
20 10 5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
30PDA20
.
30PDA40 - Standard Recovery Diode
(Nihon Inter Electronics Corporation)
3A Avg. 400 Volts Standard Recovery Diode 30PDA40
INSTANTANEOUS FORWARD CURRENT (A)
50
20 10 5
2 1 0.5
0.2 0
FORWARD CURRENT VS. VOLTAGE
30PDA40
.