* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank
* 524,288-word
* 16-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycles
MSM56V16160D Datasheet (341.37 KB)
MSM56V16160D
OKI electronic componets
341.37 KB
2-bank x 524288-word x 16-bit synchronous dynamic ram.
E2G1049-18-33 ¡ Semiconductor MSM56V16160D/DH ¡ Semiconductor ThisMSM56V16160D/DH version: Mar. 1998 Pr el im in ar y 2-Bank 524,288-Word
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