* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank
* 1,048,576-word
* 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycle
MSM56V16800DH Datasheet (340.16 KB)
MSM56V16800DH
OKI electronic componets
340.16 KB
2-bank x 1048576-word x 8-bit synchronous dynamic ram.
E2G1047-18-25 ¡ Semiconductor MSM56V16800D/DH ¡ Semiconductor ThisMSM56V16800D/DH version: Mar. 1998 Pr el im in ar y 2-Bank 1,048,576-Word .
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