* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank
* 1,048,576-word
* 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycle
MSM56V16800E Datasheet (400.66 KB)
MSM56V16800E
OKI electronic componets
400.66 KB
2-bank x 1048576-word x 8-bit synchronous dynamic ram.
E2G1053-18-54 ¡ Semiconductor MSM56V16800E ¡ Semiconductor This version: Jul. 1998 MSM56V16800E 2-Bank 1,048,576-Word 8-Bit SYNCHRONOUS.
📁 Related Datasheet
MSM56V16800D 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16800DH 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16800F 2-Bank x 1048576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16160D 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16160DH 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16160F 2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM (OKI electronic componets)
MSM56V16161N SYNCHRONOUS DYNAMIC RAM (LAPIS)
MSM56V16161NP SYNCHRONOUS DYNAMIC RAM (LAPIS)
MSM5052 Built-in Temperature Circuit and LCD Driver 4-Bit Microcontroller (OKI electronic componets)
MSM511000A 1M X 1-Bit DRAM (OKI Semiconductor)
TAGS
Image Gallery
