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MSM56V16800E 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

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Description

E2G1053-18-54 ¡ Semiconductor MSM56V16800E ¡ Semiconductor This version: Jul.1998 MSM56V16800E 2-Bank * 1,048,576-Word * 8-Bit SYNCHRONOUS.
The MSM56V16800E is a 2-bank. 1,048,576-word. 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology.

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Datasheet Specifications

Part number
MSM56V16800E
Manufacturer
OKI electronic componets
File Size
400.66 KB
Datasheet
MSM56V16800E_OKIelectroniccomponets.pdf
Description
2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

Features

* Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 2-bank
* 1,048,576-word
* 8-bit configuration 3.3 V power supply, ± 0.3 V tolerance Input : LVTTL compatible Output : LVTTL compatible Refresh : 4096 cycle

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