* http://onsemi.com
* Low Collector
* Emitter Saturation Voltage
* VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain
* hFE = 20 (min) at IC = 10 Adc High C
2N5886
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Complementary silicon high-power transistors.
www.DataSheet4U.com
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
2N5884 and 2N5886 are Preferred Devices
Complementary Silicon High
*Power Trans.
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