2SA1768 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT process.
High breakdown voltage, large current capacity.
Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --180 --160 --6 --0.7 --1.5 1 150 --55 to +150 Unit V V V A A.

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Published: Mar 22, 2016 |