2SA1770
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Bipolar transistor.
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2SA1770 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:ENN3578
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1770/2SC4614
High-Voltage Switching Applications
Features
· Adoption of MBIT.
2SA1770 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1770
DESCRIPTION ·High breakdown voltage and large current capacity ·Small and slim packa.
2SA1771 - TRANSISTOR
(Toshiba Semiconductor)
.
2SA1771 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1771
DESCRIPTION ·With TO-220F package ·Low coll.
2SA1771 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage-
: VCE(sat.
2SA1772 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN3398A
Features
· Large current capacity (IC=1A). · High breakdown votlage (VCEO≥400V).
2SA1772 : PNP Epitaxial Planar Silicon Trans.
2SA1772 - PNP Epitaxial Planar Silicon Transistor
(Kexin)
SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistor 2SA1772
Features
High breadown voltage Large current capacity (IC=1A)
+9.70 0.2 -0.2
.
2SA1773 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High breakdown voltage:
V(BR)CEO >-400V @IC=-1mA ·Large current capacity ·Minimum Lot-to-Lot variations.
2SA1773 - PNP Transistor
(Sanyo Semicon Device)
Ordering number:EN3399C
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V).
2SA1773 : PNP Eppitaxial Planar Silicon Tran.
2SA1774 - PNP General Purpose Transistor
(GME)
Production specification
PNP General Purpose Transistor
FEATURES
Excellent hFE linearity. Complementary NPN type available
(2SC4617). MSL 1
AP.