2SJ650 - P-Channl Silicon MOSFET

ON Semiconductor

Datasheet Details

Low ON-resistance.
Ultrahigh-speed switching.
4V drive. Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation Channel Temperatu.

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Published: Jan 11, 2016 |