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2SJ661 P-Channel Power MOSFET

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Description

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET *60V, *38A, 39mΩ, TO-262-3L/TO-263-2L http://onsemi.com .

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Features

* ON-resistance RDS(on)1=29.5mΩ(typ. )
* 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions uni

Applications

* and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,

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