2SJ661 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=29.5mΩ(typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001.
Input capacitance Ciss=4360pF (typ. ) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --38 --152 1.65 65 Unit V V A A W W Continued on next page. Packa.

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Published: Jan 16, 2016 |