Part number:
2SJ600
Manufacturer:
NEC
File Size:
74.45 KB
Description:
Switching p-channel power mos fet industrial use.
* Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS =
* 10 V, ID =
* 13 A) RDS(on)2 = 79 mΩ MAX. (VGS =
* 4.0 V, ID =
* 13 A)
* Low Ciss: Ciss = 1900 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package 2SJ600-Z ABSOLUTE MAX
2SJ600
NEC
74.45 KB
Switching p-channel power mos fet industrial use.
📁 Related Datasheet
2SJ600 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V.
2SJ601 - P-Channel Power MOSFET
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SJ601 is P-channel MOS Fi.
2SJ601 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ601
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
IC MOSFET
Features
Low .
2SJ602 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ602
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ602 is P-channel MOS Field Effect Transistor des.
2SJ602 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ602
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance RDS(on)1 = .
2SJ603 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor des.
2SJ604 - P-Channel Power MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor desig.
2SJ604 - MOSFET
(Kexin)
SMD Type
MOS Field Effect Transistor 2SJ604
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low on-resistance RDS(on)1 =3.
