2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC

Description

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

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Datasheet Specifications

Part number: 2SJ600
Manufacturer: NEC
File Size: 74.45 KB
Datasheet: 2SJ600_NEC.pdf
Description: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

Features

* Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS =
* 10 V, ID =
* 13 A) RDS(on)2 = 79 mΩ MAX. (VGS =
* 4.0 V, ID =
* 13 A)
* Low Ciss: Ciss = 1900 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package 2SJ600-Z ABSOLUTE MAX

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE NEC

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