2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ600 Features
* Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS =
* 10 V, ID =
* 13 A) RDS(on)2 = 79 mΩ MAX. (VGS =
* 4.0 V, ID =
* 13 A)
* Low Ciss: Ciss = 1900 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package 2SJ600-Z ABSOLUTE MAX
