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2SJ606 - MOS FIELD EFFECT TRANSISTOR

2SJ606 Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET .
The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

2SJ606 Features

* Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS =
* 10 V, ID =
* 42 A) RDS(on)2 = 23 mΩ MAX. (VGS =
* 4.0 V, ID =
* 42 A)
* Low input capacitance: Ciss = 4800 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode No

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Datasheet Details

Part number
2SJ606
Manufacturer
NEC
File Size
114.76 KB
Datasheet
2SJ606_NEC.pdf
Description
MOS FIELD EFFECT TRANSISTOR

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MOS FIELD EFFECT TRANSISTOR NEC
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