2SJ606 MOS FIELD EFFECT TRANSISTOR

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET .
The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: 2SJ606
Manufacturer: NEC
File Size: 114.76 KB
Datasheet: 2SJ606_NEC.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Super low on-state resistance: RDS(on)1 = 15 mΩ MAX. (VGS =
* 10 V, ID =
* 42 A) RDS(on)2 = 23 mΩ MAX. (VGS =
* 4.0 V, ID =
* 42 A)
* Low input capacitance: Ciss = 4800 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode No

2SJ606 Distributors

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2SJ606 MOS FIELD EFFECT TRANSISTOR NEC

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