Datasheet4U Logo Datasheet4U.com

2SJ607 - MOSFET

2SJ607 Description

SMD Type MOS Field Effect Transistor 2SJ607 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 .

2SJ607 Features

* Low on-resistance RDS(on)1 =11 m RDS(on)2 = 16 m MAX. (VGS =-10 V, ID = -42A) Low Ciss: Ciss = 7500 pF TYP. Built-in gate protection diode +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. (VGS = -4.0 V, ID =-42 A) +0.2 8.7-0.2 +0.2 2.54-

📥 Download Datasheet

Preview of 2SJ607 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SJ607
Manufacturer
Kexin
File Size
67.84 KB
Datasheet
2SJ607_Kexin.pdf
Description
MOSFET

📁 Related Datasheet

  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ602 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ603 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ604 - P-Channel Power MOSFET (NEC)
  • 2SJ605 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ606 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ608 - Ultrahigh Speed Switching Applications (Sanyo Semicon Device)

📌 All Tags

Kexin 2SJ607-like datasheet