Datasheet Details
- Part number
- 2SJ601
- Manufacturer
- NEC
- File Size
- 87.89 KB
- Datasheet
- 2SJ601_NEC.pdf
- Description
- P-Channel Power MOSFET
2SJ601 Description
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
Low on-state resistance:
RDS(on)1.
2SJ601 Features
* Low on-state resistance:
RDS(on)1 = 31 mΩ MAX. (VGS =
* 10 V, ID =
* 18 A) RDS(on)2 = 46 mΩ MAX. (VGS =
* 4.0 V, ID =
* 18 A)
* Low Ciss: Ciss = 3300 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package
ORDERING INFORMATION
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