Datasheet4U.com

2SJ601 - P-Channel Power MOSFET

Product Overview

NEC

📥 Download Datasheet

2SJ601 P-Channel Power MOSFET by NEC - Datasheet Preview — Datasheet preview – 2SJ601

Datasheet Details

Part number	2SJ601
Manufacturer	NEC
File Size	87.89 KB
Description	P-Channel Power MOSFET
Datasheet	2SJ601 Datasheet
Additional preview pages of the 2SJ601 datasheet.

Product details

Description

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS =.
10 V, ID =.
18 A) RDS(on)2 = 46 mΩ MAX. (VGS =.
4.0 V, ID =.
18 A).
Low Ciss: Ciss = 3300 pF TYP.
Built-in gate protection diode.
TO-251/TO-252 package.

📁 Similar Datasheet

2SJ607 - MOSFET (Kexin)
2SJ608 - Ultrahigh Speed Switching Applications (Sanyo Semicon Device)
2SJ609 - DC / DC Converter Applications (Sanyo Semicon Device)
2SJ610 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
2SJ612 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
2SJ613 - Ultrahigh Speed Switching Applications (Sanyo)
2SJ615 - P-Channel Silicon MOSFET (Sanyo)
2SJ619 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by NEC

2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ602 - MOS FIELD EFFECT TRANSISTOR
2SJ603 - MOS FIELD EFFECT TRANSISTOR
2SJ604 - P-Channel Power MOSFET
2SJ605 - MOS FIELD EFFECT TRANSISTOR
2SJ606 - MOS FIELD EFFECT TRANSISTOR

Published: Jul 12, 2007 |