2SJ601 Datasheet - NEC

2SJ601, P-Channel Power MOSFET

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. Low on-state resistance: RDS(on)1.

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2SJ601_NEC.pdf

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Datasheet Details

Part number:

2SJ601

Manufacturer:

NEC

File Size:

87.89 KB

Description:

P-Channel Power MOSFET

Features

* Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS =
* 10 V, ID =
* 18 A) RDS(on)2 = 46 mΩ MAX. (VGS =
* 4.0 V, ID =
* 18 A)
* Low Ciss: Ciss = 3300 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package ORDERING INFORMATION

2SJ601 Distributors

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2SJ601 P-Channel Power MOSFET NEC

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