Datasheet4U Logo Datasheet4U.com

2SJ601 - P-Channel Power MOSFET

2SJ601 Description

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. Low on-state resistance: RDS(on)1.

2SJ601 Features

* Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS =
* 10 V, ID =
* 18 A) RDS(on)2 = 46 mΩ MAX. (VGS =
* 4.0 V, ID =
* 18 A)
* Low Ciss: Ciss = 3300 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package ORDERING INFORMATION

📥 Download Datasheet

Preview of 2SJ601 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
2SJ601
Manufacturer
NEC
File Size
87.89 KB
Datasheet
2SJ601_NEC.pdf
Description
P-Channel Power MOSFET

📁 Related Datasheet

  • 2SJ607 - MOSFET (Kexin)
  • 2SJ608 - Ultrahigh Speed Switching Applications (Sanyo Semicon Device)
  • 2SJ609 - DC / DC Converter Applications (Sanyo Semicon Device)
  • 2SJ610 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
  • 2SJ612 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • 2SJ613 - Ultrahigh Speed Switching Applications (Sanyo)
  • 2SJ615 - P-Channel Silicon MOSFET (Sanyo)
  • 2SJ619 - Silicon P-Channel MOSFET (Toshiba Semiconductor)

📌 All Tags

NEC 2SJ601-like datasheet