2SJ601 - P-Channel Power MOSFET
2SJ601 Features
* Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS =
* 10 V, ID =
* 18 A) RDS(on)2 = 46 mΩ MAX. (VGS =
* 4.0 V, ID =
* 18 A)
* Low Ciss: Ciss = 3300 pF TYP.
* Built-in gate protection diode
* TO-251/TO-252 package ORDERING INFORMATION
