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2SJ603 Datasheet - NEC

2SJ603 MOS FIELD EFFECT TRANSISTOR

2SJ603 Features

* Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =

* 10 V, ID =

* 13 A) RDS(on)2 = 75 mΩ MAX. (VGS =

* 4.0 V, ID =

* 13 A)

* Low input capacitance: Ciss = 1900 pF TYP. (VDS =

* 10 V, VGS = 0 V)

* Built-in gate protection diode No

2SJ603_NEC.pdf

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Datasheet Details

Part number:

2SJ603

Manufacturer:

NEC

File Size:

115.96 KB

Description:

Mos field effect transistor.

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2SJ603 2SJ603 MOS FIELD EFFECT TRANSISTOR NEC

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