Part number:
2SJ605
Manufacturer:
NEC
File Size:
120.10 KB
Description:
Mos field effect transistor.
* Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =
* 10 V, ID =
* 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =
* 4.0 V, ID =
* 33 A)
* Low input capacitance ! Ciss = 4600 pF TYP. (VDS =
* 10 V, VGS = 0 A)
* Built-in gate protection diode N
2SJ605
NEC
120.10 KB
Mos field effect transistor.
📁 Related Datasheet
2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
2SJ600 MOSFET (Kexin)
2SJ601 P-Channel Power MOSFET (NEC)
2SJ601 MOSFET (Kexin)
2SJ602 MOS FIELD EFFECT TRANSISTOR (NEC)
2SJ602 MOSFET (Kexin)
2SJ603 MOS FIELD EFFECT TRANSISTOR (NEC)
2SJ604 P-Channel Power MOSFET (NEC)
2SJ604 MOSFET (Kexin)
2SJ605 MOSFET (Kexin)
