2SJ605 - MOS FIELD EFFECT TRANSISTOR
2SJ605 Features
* Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =
* 10 V, ID =
* 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =
* 4.0 V, ID =
* 33 A)
* Low input capacitance ! Ciss = 4600 pF TYP. (VDS =
* 10 V, VGS = 0 A)
* Built-in gate protection diode N
