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2SJ605 Datasheet - NEC

2SJ605 MOS FIELD EFFECT TRANSISTOR

2SJ605 Features

* Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =

* 10 V, ID =

* 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =

* 4.0 V, ID =

* 33 A)

* Low input capacitance ! Ciss = 4600 pF TYP. (VDS =

* 10 V, VGS = 0 A)

* Built-in gate protection diode N

2SJ605_NEC.pdf

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Datasheet Details

Part number:

2SJ605

Manufacturer:

NEC

File Size:

120.10 KB

Description:

Mos field effect transistor.

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2SJ605 2SJ605 MOS FIELD EFFECT TRANSISTOR NEC

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