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2SJ605 - MOS FIELD EFFECT TRANSISTOR

2SJ605 Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

2SJ605 Features

* Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =
* 10 V, ID =
* 33 A) RDS(on)2 = 31 mΩ MAX. (VGS =
* 4.0 V, ID =
* 33 A)
* Low input capacitance ! Ciss = 4600 pF TYP. (VDS =
* 10 V, VGS = 0 A)
* Built-in gate protection diode N

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Datasheet Details

Part number
2SJ605
Manufacturer
NEC
File Size
120.10 KB
Datasheet
2SJ605_NEC.pdf
Description
MOS FIELD EFFECT TRANSISTOR

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📌 All Tags

MOS FIELD EFFECT TRANSISTOR NEC
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