2SJ602 - MOS FIELD EFFECT TRANSISTOR
2SJ602 Features
* Super low on-state resistance: RDS(on)1 = 73 mΩ MAX. (VGS =
* 10 V, ID =
* 10 A) RDS(on)2 = 107 mΩ MAX. (VGS =
* 4.0 V, ID =
* 10 A)
* Low input capacitance: Ciss = 1300 pF TYP. (VDS =
* 10 V, VGS = 0 V)
* Built-in gate protection diode N
