Part number:
2SJ646
Manufacturer:
File Size:
96.45 KB
Description:
P-channel silicon mosfet.
* Low ON-resistance.
* Ultrahigh-speed switching.
* 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Tempera
2SJ646
96.45 KB
P-channel silicon mosfet.
📁 Related Datasheet
2SJ643 - P CHANNEL MOS SILICON TRANSISTOR
(Sanyo Semicon Device)
Ordering number : ENN7309
2SJ643
P-Channel Silicon MOSFET
2SJ643
Ultrahigh-Speed Switching Applications
Preliminary Features
• •
Package Dimensions.
2SJ645 - P CHANNEL MOS SILICON TRANSISTOR
(Sanyo Semicon Device)
2SJ645
No.
2SJ645
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2
7.5
1 0.6
2
3
2.5
0.85 0.
2SJ646 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN8282
2SJ646
P-Channel Silicon MOSFET
2SJ646
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. .
2SJ647 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ647 is a switching device whic.
2SJ648 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device whic.
2SJ649 - P-Channel MOSFET
(VBsemi)
2SJ649-VB
2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.050 at VGS = - 10 V - 60
0.0.
2SJ649 - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field .
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
