Part number:
2SJ643
Manufacturer:
Sanyo Semicon Device
File Size:
66.05 KB
Description:
P channel mos silicon transistor.
* Package Dimensions unit : mm 2083B [2SJ643] 6.5 5.0 4 1.5 2.3 0.5 Low ON-resistance. 1.8V drive. 0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3 0.6 5.5 7.0 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 www.DataSheet4U.com SANYO : TP Package Dimensions unit : mm 2092B [2SJ643] 6.5
2SJ643
Sanyo Semicon Device
66.05 KB
P channel mos silicon transistor.
📁 Related Datasheet
2SJ645 - P CHANNEL MOS SILICON TRANSISTOR
(Sanyo Semicon Device)
2SJ645
No.
2SJ645
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2
7.5
1 0.6
2
3
2.5
0.85 0.
2SJ646 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN8282
2SJ646
P-Channel Silicon MOSFET
2SJ646
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. .
2SJ646 - P-Channel Silicon MOSFET
(ON Semiconductor)
2SJ646
Ordering number : ENN8282
2SJ646
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance. • Ult.
2SJ647 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ647 is a switching device whic.
2SJ648 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device whic.
2SJ649 - P-Channel MOSFET
(VBsemi)
2SJ649-VB
2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.050 at VGS = - 10 V - 60
0.0.
2SJ649 - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field .
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
