2SJ647 Datasheet, Transistor, NEC

2SJ647 Features

• Transistor a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.3 +

PDF File Details

Part number:

2SJ647

Manufacturer:

NEC

File Size:

97.78kb

Download:

📄 Datasheet

Description:

Mos field effect transistor. The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance

2SJ647 Application

• Applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.3 +0.1
    –0 2.1 ± 0.1 1.25 ± 0.1 0.65

TAGS

2SJ647

NEC

📁 Related Datasheet

2SJ643 - P CHANNEL MOS SILICON TRANSISTOR (Sanyo Semicon Device)
Ordering number : ENN7309 2SJ643 P-Channel Silicon MOSFET 2SJ643 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions.

2SJ645 - P CHANNEL MOS SILICON TRANSISTOR (Sanyo Semicon Device)
2SJ645 No. 2SJ645 µ µ µ   6.5 5.0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 1 0.6 2 3 2.5 0.85 0.

2SJ646 - P-Channel MOSFET (Sanyo Semicon Device)
Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET 2SJ646 Features • • • General-Purpose Switching Device Applications Low ON-resistance. .

2SJ646 - P-Channel Silicon MOSFET (ON Semiconductor)
2SJ646 Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ult.

2SJ648 - MOS FIELD EFFECT TRANSISTOR (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ648 is a switching device whic.

2SJ649 - P-Channel MOSFET (VBsemi)
2SJ649-VB 2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.0.

2SJ649 - MOS FIELD EFFECT TRANSISTOR (NEC)
.. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field .

2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS F.

2SJ600 - MOSFET (Kexin)
SMD Type MOS Field Effect Transistor 2SJ600 Features Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V.

2SJ601 - P-Channel Power MOSFET (NEC)
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Fi.