Part number:
2SJ648
Manufacturer:
NEC
File Size:
169.11 KB
Description:
Mos field effect transistor.
* a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1
* 0 0.15 +0.1
* 0.05 3 0 to 0.1 2 0.2 0.5 +0.1
* 0 FEATURES
2SJ648
NEC
169.11 KB
Mos field effect transistor.
📁 Related Datasheet
2SJ643 - P CHANNEL MOS SILICON TRANSISTOR
(Sanyo Semicon Device)
Ordering number : ENN7309
2SJ643
P-Channel Silicon MOSFET
2SJ643
Ultrahigh-Speed Switching Applications
Preliminary Features
• •
Package Dimensions.
2SJ645 - P CHANNEL MOS SILICON TRANSISTOR
(Sanyo Semicon Device)
2SJ645
No.
2SJ645
µ
µ µ
6.5 5.0 4
1.5
1.5
2.3
0.5
6.5 5.0 4
2.3 0.5
7.0
5.5
5.5
7.0
0.8 1.6
0.8
1.2
7.5
1 0.6
2
3
2.5
0.85 0.
2SJ646 - P-Channel MOSFET
(Sanyo Semicon Device)
Ordering number : ENN8282
2SJ646
P-Channel Silicon MOSFET
2SJ646
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. .
2SJ646 - P-Channel Silicon MOSFET
(ON Semiconductor)
2SJ646
Ordering number : ENN8282
2SJ646
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance. • Ult.
2SJ647 - MOS FIELD EFFECT TRANSISTOR
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ647 is a switching device whic.
2SJ649 - P-Channel MOSFET
(VBsemi)
2SJ649-VB
2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.050 at VGS = - 10 V - 60
0.0.
2SJ649 - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ649
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ649 is P-channel MOS Field .
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
(NEC)
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS F.
