* Adoption of FBET process.
* Ultrasmall-sized package permitting 2SK1069- applied sets to be made smaller and slimmer. 2.1 1.250 0.3 3 0.15 0 to 0.1 0.2 12 0.65 0.65 2.0 0.3 0.6 0.9 0.425 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate
2SK1069
137.40 KB
N-channel junction silicon fet.
Ordering number : EN2749 2SK1069 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications Applications Low-frequen.
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