74VHC02MTC
545.27kb
Quad 2-input nor gate. The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed op
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74VHC02M - Quad 2-Input NOR Gate
(ON Semiconductor)
74VHC02 — Quad 2-Input NOR Gate
74VHC02 Quad 2-Input NOR Gate
Features
■ High Speed: tPD = 3.6ns (Typ.) at VCC = 5V ■ Low power dissipation: ICC = 2µ.
74VHC02 - QUAD 2-INPUT NOR GATE
(STMicroelectronics)
74VHC02
QUAD 2-INPUT NOR GATE
s HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNI.
74VHC02 - Quad 2-Input NOR Gate
(Fairchild Semiconductor)
74VHC02 — Quad 2-Input NOR Gate
December 2007
74VHC02 Quad 2-Input NOR Gate
Features
■ High Speed: tPD = 3.6ns (Typ.) at VCC = 5V ■ Low power dissi.
74VHC02 - Quad 2-Input NOR Gate
(ON Semiconductor)
74VHC02 — Quad 2-Input NOR Gate
74VHC02 Quad 2-Input NOR Gate
Features
■ High Speed: tPD = 3.6ns (Typ.) at VCC = 5V ■ Low power dissipation: ICC = 2µ.
74VHC02 - Quad 2-input NOR gate
(NXP)
74VHC02; 74VHCT02
Quad 2-input NOR gate
Rev. 01 — 13 August 2009
Product data sheet
1. General description
The 74VHC02; 74VHCT02 are high-speed Si-g.
74VHC02 - Quad 2-input NOR gate
(nexperia)
74VHC02; 74VHCT02
Quad 2-input NOR gate
Rev. 2 — 15 April 2020
Product data sheet
1. General description
The 74VHC02; 74VHCT02 are high-speed Si-gat.
74VHC02-Q100 - Quad 2-input NOR gate
(NXP)
74VHC02-Q100; 74VHCT02-Q100
Quad 2-input NOR gate
Rev. 1 — 15 November 2013
Product data sheet
1. General description
The 74VHC02-Q100; 74VHCT02-.
74VHC02-Q100 - Quad 2-input NOR gate
(nexperia)
74VHC02-Q100; 74VHCT02-Q100
Quad 2-input NOR gate
Rev. 2 — 15 April 2020
Product data sheet
1. General description
The 74VHC02-Q100; 74VHCT02-Q100 .
74VHC02SJ - Quad 2-Input NOR Gate
(ON Semiconductor)
74VHC02 — Quad 2-Input NOR Gate
74VHC02 Quad 2-Input NOR Gate
Features
■ High Speed: tPD = 3.6ns (Typ.) at VCC = 5V ■ Low power dissipation: ICC = 2µ.
74VHC00 - QUAD 2-INPUT NAND GATE
(STMicroelectronics)
74VHC00
QUAD 2-INPUT NAND GATE
s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUN.