BUT11AF - NPN Silicon Transistor
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DATA SHEET www.onsemi.com NPN Silicon Transistor BUT11AF High Voltage Power Switching Applications MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage 1000 V VCEO Collector Emitter Voltage 450 V VEBO Emitter Base Voltage 9 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP Base Current (Pulse) 4 A PC Collector Dissipation (TC = 25
