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BUT11AF NPN Silicon Transistor

BUT11AF Description

DATA SHEET www.onsemi.com NPN Silicon Transistor BUT11AF High Voltage Power Switching Applications MAXIMUM RATINGS (TC = 25°C unless otherwise note.
98AON67439E Electronic versions are uncontrolled except when accessed directly from the Document Repository.

BUT11AF Applications

* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector
* Base Voltage 1000 V VCEO Collector
* Emitter Voltage 450 V VEBO Emitter
* Base Voltage 9 V IC Collector Current (DC) 5 A ICP
* Collector Current (Pulse) 10 A IB

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