BUT11APX-1200 Datasheet - NXP

BUT11APX-1200, Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL .
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal d.

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BUT11APX-1200_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUT11APX-1200

Manufacturer:

NXP ↗

File Size:

62.26 KB

Description:

Silicon Diffused Power Transistor

Features

* exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter v

Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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