BUT11XI Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI GENERAL .
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast a.

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Datasheet Specifications

Part number: BUT11XI
Manufacturer: NXP ↗
File Size: 69.33 KB
Datasheet: BUT11XI_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipati

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