BUT11AI Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL .
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applicat.

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Datasheet Specifications

Part number: BUT11AI
Manufacturer: NXP ↗
File Size: 17.65 KB
Datasheet: BUT11AI_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipa

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