CNY17 - Phototransistor Optocouplers

This page provides the datasheet information for the CNY17, a member of the CNY171M Phototransistor Optocouplers family.

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in

line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
to.
Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip.
to.
Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Ins.

onsemi

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Datasheet Details

Part number	CNY17
Manufacturer	onsemi
File Size	367.63 KB
Description	Phototransistor Optocouplers
Datasheet	CNY17 Datasheet
Additional preview pages of the CNY17 datasheet.

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Full PDF Text Transcription

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6-Pin DIP High BVCEO Phototransistor Optocouplers CNY17 Series, MOC8106M Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.

Published: Jul 22, 2023 |