Description
6-Pin DIP High BVCEO Phototransistor Optocouplers CNY17 Series, MOC8106M .
The CNY17XM, CNY17FXM, and MOC8106M devices consist of
a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in.
Features
* High BVCEO: 70 V Minimum
(CNY17XM, CNY17FXM, MOC8106M)
* Closely Matched Current Transfer Ratio (CTR) Minimizes
Unit
* to
* Unit Variation
* Current Transfer Ratio In Select Groups
* Very Low Coupled Capacitance Along With
No Chip
* to
* Pin 6 Base Connectio
Applications
* Power Supply Regulators
* Digital Logic Inputs
* Microprocessor Inputs
* Appliance Sensor Systems
* Industrial Controls
DATA SHEET www. onsemi. com
6 1
PDIP6 CASE 646BY
6 1
PDIP6 CASE 646BX
6 1
PDIP6 CASE 646BZ
MARKING DIAGRAM
ON 1 CNY17
* 1 2 V X YY Q 6
34
5
1. ON =
