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ESD11B5.0ST5G

Mid-Capacitance Bi-Directional TVS Diode

ESD11B5.0ST5G Features

* http://onsemi.com

* Low Capacitance 12 pF Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.3 mm Stand

* off Voltage: 5.0 V Low Leakage Response Time is <

ESD11B5.0ST5G General Description

of survivability specs. © Semiconductor Components Industries, LLC, 2009 July, 2009

* Rev. 2 1 Publication Order Number: ESD11B5.0S/D ESD11B5.0ST5G www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT Parameter Maximum Reverse Pea.

ESD11B5.0ST5G Datasheet (160.04 KB)

Preview of ESD11B5.0ST5G PDF

Datasheet Details

Part number:

ESD11B5.0ST5G

Manufacturer:

ON Semiconductor ↗

File Size:

160.04 KB

Description:

Mid-capacitance bi-directional tvs diode.
www.DataSheet4U.com ESD11B5.0ST5G Transient Voltage Suppressors Micro

*Packaged Diodes for ESD Protection The ESD11B Series is designed to pr.

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ESD11B5.0ST5G Mid-Capacitance Bi-Directional TVS Diode ON Semiconductor

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